sunli
Senior Lab Master
No content
Paper Publications
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[1] 焦娇娇. g-C3N4-based homojunction induced by Ag and P selective doping for improved photocatalytic H2 evo.... Applied Surface Science, 639, 2023.
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[2] 王兴龙. Hot-zone design and optimization of resistive heater for SiC single crystal growth. JOURNAL OF MATERIALS SCIENCE Journal, 2024.
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[3] 王鹏. The surface and interface evolution of graphene under air exposure. 2022.
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[4] 仲光磊. Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder. CrystEng Comm, 7690, 2022.
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[5] 张洁. Toward smart flexible self-powered near-UV photodetector of amorphous Ga2O3 nanosheet. MATERIALS TODAY PHYSICS, 2023.
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[6] 刘东. Flexible Omnidirectional Self-Powered Photodetectors Enabled by Solution-Processed Two-Dimensiona.... ACS Applied Materials & Interfaces, 46748, 2022.
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[7] 孙丽. Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC. Nanomaterials , 12, 2022.
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[8] 姜超. Phase transition regulation and piezoelectric performance optimization of fresnoite crystals for .... Journal of Materials Chemistry C, 10, 180, 2021.
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[9] 武广达. Growth, Optical, and Spectroscopic Properties of Pure and Nd3+-Doped GdSr3(PO4)(3) Crystals with .... Inorganic chenistry, 61, 170, 2022.
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[10] 李迎仙. Direct Synthesis of Graphene Dendrites on SiO2/Si Substrates by Chemical Vapor Deposition. NANOSCALE RESEARCH LETTERS, 15, 2020.
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[11] 罗兴云. Charge-neutral epitaxial graphene on 6H-SiC(0001) via FeSi intercalation. CARBON, 156, 187, 2019.
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[12] 罗兴云. Theoretical prediction of eliminating the buffer layer and achieving charge neutrality for epitax.... CARBON, 161, 323, 2020.
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[13] 李妍璐. A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seedin.... ACS Applied Materials & Interfaces, 2019.
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[14] 孙丽. Effect of Ag nanoparticles on wafer-scale quasi-free-standing graphene characterization by surfac.... MATERIALS RESEARCH EXPRESS, 7, 2020.
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[15] 罗兴云. Charge-neutral epitaxial graphene on 6HeSiC(0001) via FeSi intercalation. Carbon, 156, 187, 2019.
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[16] zhaoxian , Yu Fapeng , chengxiufeng and liyanlu. Theoretical prediction of eliminating the buffer layer and achieving charge neutrality for epitax.... Carbon, 161, 323, 2020.
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[17] Yu Fapeng , zhaoxian , liqingbo , sunli , yangzhiyuan and liyanlu. Induced growth of quasi-free-standing graphene on SiC substrates. RSC Advances, 2019.
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[18] xiexuejian , sunli , chenxiufang , yangxianglong , huxiaobo and xuxiangang. Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique. SCRIPTA MATERIALIA, 76, 2019.
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[19] chenxiufang , sunli , xuxiangang , zhaoxian and 于璨璨. Uniform coverage of quasi-free standing monolayer graphene on SiC by hydrogen intercalation. Journal of Materials Science-Materials in Electronics, 28, 3884, 2017.
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[20] yangzhiyuan , sunli , Yu Fapeng , liyanlu , chengxiufeng , zhaoxian and 张晶. Preparation of bilayer graphene utilizing CuO as nucleation sites by CVD method. Journal of Materials Science-Materials in Electronics, 29, 4495, 2018.